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  savantic semiconductor product specification silicon pnp power transistors 2SB681 description with to-3 package high power dissipation applications power amplifier applications recommended for high-power high-fidelity audio frequency amplifier output stage pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -150 v v ceo collector-emitter voltage open base -150 v v ebo emitter-base voltage open collector -5 v i c collector current -12 a i cm collector current-peak -20 a p c collector power dissipation t c =25 100 w t j junction temperature 150  t stg storage temperature -40~150  fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB681 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-30ma ;i b =0 -150 v v (br)cbo collector-emitter breakdown voltage i c =-1ma ;i e =0 -150 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-6a; i b =-0.6a -2.5 v v be base-emitter on voltage i c =-1a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-150v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-5v; i c =0 -0.1 ma h fe-1 dc current gain i c =-1a ; v ce =-5v 40 140 h fe-2 dc current gain i c =-5a ; v ce =-5v 20 f t transition frequency i c =-1a ; v ce =-5v 13 mhz  h fe-1 classifications r o 40-80 70-140
savantic semiconductor product specification 3 silicon pnp power transistors 2SB681 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)


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